SI7423DN-T1-GE3【PDF 2/12 页】MOSFET P-CH D-S 30V PPAK 1212-8

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Si7423DN

Vishay Siliconix

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

-1

-3

V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 20 V

V DS = - 30 V, V GS = 0 V

V DS = - 30 V, V GS = 0 V, T J = 85 °C

V DS ≤ - 5 V, V GS = - 10 V

- 30

± 100

-1

-5

nA

μA

A

Drain-Source On-State Resistance a

Forward Transconductance a

R DS(on)

g fs

V GS = - 10 V, I D = - 11.7 A

V GS = - 4.5 V, I D = - 9.0 A

V DS = - 15 V, I D = - 11.7 A

0.014

0.023

29

0.018

0.030

Ω

S

Diode Forward Voltage

a

V SD

I S = - 3.2 A, V GS = 0 V

- 0.76

- 1.2

V

Dynamic b

Total Gate Charge

Q g

37.5

56

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Q gs

Q gd

R g

t d(on)

t r

V DS = - 15 V, V GS = - 10 V, I D = - 11.7 A

f = 1 MHz

V DD = - 15 V, R L = 15 Ω

5.8

9.6

5

11

10

20

15

nC

Ω

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

t d(off)

t f

t rr

I D ? - 1 A, V GEN = - 10 V, R g = 6 Ω

I F = - 3.2 A, dI/dt = 100 A/μs

74

50

30

110

75

ns

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30

25

20

15

10

V GS = 10 thru 4 V

3V

30

25

20

15

10

T C = 125 °C

5

0

5

0

25 °C

- 55 °C

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

www.vishay.com

2

V DS - Drain-to-Source Voltage (V)

Output Characteristics

V GS - Gate-to-Source Voltage (V)

Transfer Characteristics

Document Number: 72582

S-83051-Rev. C, 29-Dec-08

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